Application Case of Silicon Carbide Crystal Growth Furnace in the Semiconductor Industry
Introduction
Physical Vapor Transport (PVT) is one of the mainstream methods for preparing silicon carbide (SiC) crystals. In PVT-based SiC single crystal growth, temperatures can reach up to 2300°C, requiring strict control of the temperature gradient during the process. The temperature control system employs a closed-loop design, consisting of an infrared pyrometer, a temperature controller, a heating power supply, and a heater (induction coil).
Yudian AI Series Intelligent Controllers
- AI-8×9 Series
- AI-MODBUS-TCP1-24VDC
These controllers have been successfully implemented in silicon carbide (SiC) crystal growth furnaces at a leading domestic semiconductor equipment manufacturer. The system achieves precise temperature control, with the instruments supporting multiple I/O specifications, adjustable control cycles, and alarm functions. Communication interfaces include RS485 and RS232, and compatibility with external TCP modules enables seamless MODBUS-TCP communication.
Temperature Control Performance
Temperature fluctuation ≤±0.5°C at 2200°C, with overshoot and settling time metrics matching the performance of competing UK products. Validated by end customers, it serves as a direct replacement for imported counterparts, successfully achieving domestic substitution.
